Cation grain‐boundary diffusivity in SiO2‐ and MgO‐doped Al2O3

Abstract

Cation grain‐boundary diffusion in undoped and aliovalent‐doped Al2O3 is characterized using Cr2O3 as a chemical tracer. The compositional depth profiles measured by secondary ion mass spectrometry are fitted to the Whipple‐LeClaire model. The results indicate that cation grain‐boundary diffusivity is insensitive to MgO and SiO2 dopants between 1100°C and 1300°C.

Document Details

Document Type
Pub Defense Publication
Publication Date
Aug 21, 2017
Source ID
10.1111/jace.15104

Entities

People

  • Lin Feng
  • Shen J Dillon

Organizations

  • Office of Naval Research Global
  • University of Illinois Urbana–Champaign

Tags

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology