Experimental observations of amorphization in multiple generations of boron carbide

Abstract

Boron carbide is an excellent armor material due to its light weight and ultrahigh hardness. However, high‐rate mechanical behavior can be degraded by stress‐induced amorphization. In this paper, we review the progressive advances in the understanding of amorphization in three successive generations of boron carbide: stoichiometric (undoped), B‐rich, and B/Si codoped boron carbides. For each generation of boron carbide, the crystal structure and microstructure are first discussed. Then, we outline the experimental observations of amorphization made by Raman spectroscopy and transmission electron microscopy. The susceptibility of amorphization in each generation of boron carbide will be compared and the fundamental mechanisms that explain the reduction in amorphization for B‐rich and B/Si codoped boron carbides elucidated. Comments on future research directions to further broaden and deepen the understanding of stress‐induced amorphization of boron carbide are also provided.

Document Details

Document Type
Pub Defense Publication
Publication Date
Aug 15, 2021
Source ID
10.1111/jace.18058

Entities

People

  • Chawon Hwang
  • Christopher J. Marvel
  • Jerry C LaSalvia
  • Kevin Hemker
  • Martin P Harmer
  • Mo‐rigen He
  • Qirong Yang
  • Richard A Haber
  • Yuxuan Xie

Organizations

  • Johns Hopkins University
  • Lawrence Livermore National Laboratory
  • Lehigh University
  • Rutgers University
  • United States Army Research Laboratory

Tags

Readers

  • Materials Science and Engineering.
  • Theoretical Analysis.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene