A reliable approach to prepare brittle semiconducting materials for cross‐sectional transmission electron microscopy
Abstract
Here, we present a sample preparation approach that simplifies the thinning of very brittle wide bandgap semiconducting materials in cross‐section geometry for (scanning) transmission electron microscopy. Using AlN thin films grown on sapphire and AlN substrates as case studies, we demonstrate that high‐quality samples can be routinely prepared while greatly reducing the preparation time and consumables cost. The approach removes the sample preparation barrier to studying a wide variety of materials by electron microscopy.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 07, 2017
- Source ID
- 10.1111/jmi.12601
Entities
People
- J.h. Dycus
- James M. LeBeau
Organizations
- Air Force Office of Scientific Research
- Division of Graduate Education
- National Science Foundation
- North Carolina State University