Evaluation of electron energy spread in CsBr based photocathodes

Abstract

Photocathodes with relatively low energy spread (<0.5eV) are required for electron sources in several applications including single and multiple electron beam inspection and lithography tools and free electron lasers. CsBr based photocathodes have been shown to be very robust and capable of operation at high current density (>150A∕cm2) with very long lifetime (approximately hundreds of hours/spot). Experimental results of the photoelectron energy spread obtained in CsBr films deposited on both metal and InGaN substrates will be presented in this paper.

Document Details

Document Type
Pub Defense Publication
Publication Date
Nov 01, 2008
Source ID
10.1116/1.2976572

Entities

People

  • Fabian Pease
  • Juan R. Maldonado
  • Piero Pianetta
  • Sayaka Tanimoto
  • Xuefeng Liu
  • Yun Sun
  • Zhi Liu

Organizations

  • Defense Advanced Research Projects Agency
  • Hitachi Central Research Laboratory
  • Stanford Synchrotron Radiation Lightsource
  • Stanford University

Tags

Fields of Study

  • Physics

Readers

  • Electronics Engineering
  • Molecular Photonics/Laser Physics
  • Nanofabrication and Microfabrication.

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene