Preferential orientation effects in partial melt laser crystallization of silicon
Abstract
The ability to produce a known crystalline orientation in semiconductor materials is essential for many applications, including monolithic three-dimensional integration of devices. In particular, crystallization must be done without exceeding the thermal budget of surrounding or underlying devices. Using a 532nm laser pulse of 2ms duration on a 185nm thick amorphous silicon film, the authors demonstrate that partial melting of silicon can yield crystallites several microns in size with a strong ⟨001⟩ preferential orientation. They investigate the effects of laser pulse duration, film thickness, and heat flow rate on the degree of texturing. By using a thinner silicon film and reducing the laser pulse duration further, such a process could be compatible with the thermal constraints of three-dimensional integration.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 01, 2008
- Source ID
- 10.1116/1.2998702
Entities
People
- D. J. Witte
- D. S. Pickard
- F. Crnogorac
- M. P. A. Masbou
- R. F. W. Pease
Organizations
- National Science Foundation
- National University of Singapore
- Stanford University