Neutral particle proximity lithography: Noncontact nanoscale printing without charge-related artifacts
Abstract
The authors present neutral particle proximity lithography, a high resolution, parallel exposure technique where a broad beam of energetic neutral particles floods a stencil mask and transmitted beamlets transfer the mask pattern to resist on a substrate. It preserves the advantages of nanoscale penumbra, diffraction, and resist scattering of ion beam lithography (IBL) yet is intrinsically immune to charge accumulation on the mask and substrate. In a series of direct comparisons, involving insulating substrates, large proximity gaps, and ultrasmall features, the authors show that the use of neutral particles provides a simple method for completely eliminating the charging artifacts of IBL. They demonstrate the ability to print 8nm mask features with 5nm pattern fidelity. Exposure times are about 200s in poly(methyl methacrylate) resist.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 01, 2008
- Source ID
- 10.1116/1.2998765
Entities
People
- Barry Craver
- Hatem Nounu
- James Wasson
- John C. Wolfe
Organizations
- National Science Foundation
- University of Houston