Pulsed laser techniques for nanographoepitaxy
Abstract
Graphoepitaxy is a technique that has been demonstrated as a means for fashioning regions of single crystal semiconductors on amorphous substrates. In that earlier work the heating period was long (1s or more) and the substrate needed to be held close to the melting point of the semiconductor. With a view to achieving three-dimensional integrated circuits, the authors have investigated the possibility using graphoepitaxy to yield device quality single crystal islands of silicon on an amorphous substrate without excessive heating of the underlying layers by using transient (<1ms) heating. A stationary laser pulse of 532nm wavelength, 100μs duration, and 22μm diameter impinged on a 50nm thick amorphous silicon film deposited on 12nm thick SiO2 inverted pyramid template. We demonstrated successful graphoepitaxial orientation of crystallized silicon but only under conditions that gave excessive heating (>400°C) of lower layers, thus indicating that this technique is impractical for three-dimensional integrated circuits.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 01, 2008
- Source ID
- 10.1116/1.3013373
Entities
People
- D. J. Witte
- F. Crnogorac
- R. F. W. Pease
Organizations
- National Science Foundation
- Stanford University