Development of cap-free sputtered GeTe films for inline phase change switch based RF circuits
Abstract
Germanium telluride (GeTe) films have been recently demonstrated as the active element in low-loss RF switches where a 7.3 THz cut-off frequency (Fco) was achieved. In order to simultaneously realize the low ON-state transmission loss and large OFF-state isolation required for this application, significant optimization of the GeTe films was required. In particular, minimizing contact resistance (Rc) and sheet resistivity (Rsheet) without the use of a capping layer is a necessity. Varying the GeTe deposition conditions led to a wide range of structural, chemical, and electrical properties, which ultimately enabled the demonstration of a capless GeTe inline phase change switch (IPCS) structure. Conversely, improper deposition conditions led to extensive oxidation which would push Rc and Rsheet to unacceptable levels. In addition to its relevance for IPCS devices, this work has implications for the environmental stability of GeTe as a function of its physical morphology.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 24, 2014
- Source ID
- 10.1116/1.4883217
Entities
People
- Brian P. Wagner
- Evan B. Jones
- John S. Mason Jr.
- Matthew R. King
- Michael J. Lee
- Nabil El-Hinnawy
- Pavel Borodulin
- Robert M. Young
- Robert S. Howell
- Sean R. Mclaughlin
Organizations
- Defense Advanced Research Projects Agency
- Northrop Grumman Electronic Systems