Growth of SrVO3 thin films by hybrid molecular beam epitaxy
Abstract
The authors report the growth of stoichiometric SrVO3 thin films on (LaAlO3)0.3(Sr2AlTaO6)0.7 (001) substrates using hybrid molecular beam epitaxy. This growth approach employs a conventional effusion cell to supply elemental A-site Sr and the metalorganic precursor vanadium oxytriisopropoxide (VTIP) to supply vanadium. Oxygen is supplied in its molecular form through a gas inlet. An optimal VTIP:Sr flux ratio has been identified using reflection high-energy electron-diffraction, x-ray diffraction, atomic force microscopy, and scanning transmission electron microscopy, demonstrating stoichiometric SrVO3 films with atomically flat surface morphology. Away from the optimal VTIP:Sr flux, characteristic changes in the crystalline structure and surface morphology of the films were found, enabling identification of the type of nonstoichiometry. For optimal VTIP:Sr flux ratios, high quality SrVO3 thin films were obtained with smallest deviation of the lattice parameter from the ideal value and with atomically smooth surfaces, indicative of the good cation stoichiometry achieved by this growth technique.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 28, 2015
- Source ID
- 10.1116/1.4927439
Entities
People
- Craig Eaton
- Everett D. Grimley
- Hamideh M. Alipour
- James M. LeBeau
- Jarrett A. Moyer
- Matthew Brahlek
- Roman Engel-herbert
Organizations
- National Science Foundation
- North Carolina State University
- Office of Naval Research
- Pennsylvania State University
- University of Illinois Urbana–Champaign