Effect of proton irradiation energy on AlGaN/GaN metal-oxide semiconductor high electron mobility transistors
Abstract
The effects of proton irradiation energy on dc characteristics of AlGaN/GaN metal-oxide semiconductor high electron mobility transistors (MOSHEMTs) using Al2O3 as the gate dielectric were studied. Al2O3/AlGaN/GaN MOSHEMTs were irradiated with a fixed proton dose of 5 × 1015 cm−2 at different energies of 5, 10, or 15 MeV. More degradation of the device dc characteristics was observed for lower irradiation energy due to the larger amount of nonionizing energy loss in the active region of the MOSHEMTs under these conditions. The reductions in saturation current were 95.3%, 68.3%, and 59.8% and reductions in maximum transconductance were 88%, 54.4%, and 40.7% after 5, 10, and 15 MeV proton irradiation, respectively. Both forward and reverse gate leakage current were reduced more than one order of magnitude after irradiation. The carrier removal rates for the irradiation energies employed in this study were in the range of 127–289 cm−1. These are similar to the values reported for conventional metal-gate high-electron mobility transistors under the same conditions and show that the gate dielectric does not affect the response to proton irradiation for these energies.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 18, 2015
- Source ID
- 10.1116/1.4928730
Entities
People
- Brian Tracy
- Byung-jae Kim
- Chen Dong
- David J Smith
- Erin Patrick
- Fan Ren
- Gwangseok Yang
- Ivan I. Kravchenko
- Jihyun Kim
- Shihyun Ahn
- Stephen Pearton
- Weidi Zhu
- Ya-hsi Hwang
Organizations
- Arizona State University
- Korea University
- National Science Foundation
- Oak Ridge National Laboratory
- United States Department of Defense
- University of Florida