Investigation of traps in AlGaN/GaN high electron mobility transistors by sub-bandgap optical pumping
Abstract
Sub-bandgap optical pumping with wavelengths of 671, 532, or 447 nm was employed to study traps in AlGaN/GaN high electron mobility transistors. The trap energies were determined from the Arrhenius plots of transient drain current at different temperatures. Prominent states were located around 0.7 eV below the conduction band, and these are commonly reported to be nonradiative traps due to defects trapped on dislocations or possibly Ga interstitials. In addition, traps located at 1.9 and 2.35 eV below the conduction band were found, which have been reported as NGa antisite and VGa–ON complexes, respectively. The postillumination drain current decays were analyzed with a persistent photoconductivity method, and time constants were extracted and associated with the recapture process in the AlGaN barrier and GaN channel layers.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 28, 2015
- Source ID
- 10.1116/1.4931790
Entities
People
- Brent P. Gila
- David J. Cheney
- Erin Patrick
- Fan Ren
- Mark E. Law
- Ming-lan Zhang
- Steve J. Pearton
- Tsung-sheng Kang
Organizations
- Hebei University of Technology
- National Science Foundation
- United States Department of Defense
- University of Florida