SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system
Abstract
Silicon germanium tin alloys were grown directly on Si substrates using a cold-wall ultrahigh-vacuum chemical vapor deposition system at 300 °C, where commercially available precursors of silane, germane, and stannic chloride were used to grow the epitaxial layers. The crystallinity and growth quality of the SiyGe1−x−ySnx films were investigated through material characterization methods including x-ray diffraction, scanning electron microscopy, energy-dispersive x-ray spectroscopy, and transmission electron microscopy. Rutherford backscattering measurements show that 2%–5% of the Sn and 3%–5% of the Si were successfully incorporated. Investigation of the material growth parameters shows that a flow rate of stannic chloride higher than 1 sccm results in etching of the film, while an increase in the silane flow rate results in amorphous film growth. The photoluminescence study shows clear emission peaks ascribed to direct and indirect bandgap transitions, which are in agreement with theoretical calculations.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 01, 2015
- Source ID
- 10.1116/1.4936892
Entities
People
- Aboozar Mosleh
- Baohua Li
- Greg Sun
- Hameed A. Naseem
- Larry C. Cousar
- Murtadha Alher
- Perry C. Grant
- Richard Soref
- Sattar Al-Kabi
- Seyed Amir Ghetmiri
- Shui-Qing Yu
- Wei Dou
- Wei Du
Organizations
- Air Force Office of Scientific Research
- Defense Advanced Research Projects Agency
- National Science Foundation
- University of Arkansas
- University of Karbala
- University of Massachusetts Boston
- University of Wasit