Resonant cavity germanium photodetector via stacked single-crystalline nanomembranes

Abstract

In this paper, the authors report resonant cavity (RC) metal-semiconductor-metal (MSM) germanium nanomembrane (Ge NM) photodetectors via transfer printing. The dislocation-free Ge NM layer was transferred onto an ultrathin Si NM/SiO2 distributed Bragg reflector. As a result, a low dark current density of 1 × 10−9 A/μm2 and a quantum efficiency of 17.3% at 1.55 μm, which is twice larger than the quantum efficiency without a bottom mirror, were measured from the transferred RC MSM Ge photodetector. The enhancement of the quantum efficiency is verified by simulation.

Document Details

Document Type
Pub Defense Publication
Publication Date
May 02, 2016
Source ID
10.1116/1.4948531

Entities

People

  • Dong Liu
  • Jaeseong Lee
  • Jung-Hun Seo
  • Minkyu Cho
  • Munho Kim
  • Weidong Zhou
  • Zhenqiang Ma
  • Zongfu Yu

Organizations

  • Air Force Office of Scientific Research
  • University of Texas at Arlington
  • University of Wisconsin–Madison

Tags

Readers

  • Nanofabrication and Microfabrication.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing