Selective release of InP heterostructures from InP substrates
Abstract
The authors report here a method of protecting the sidewall for the selective release of InGaAsP quantum-well (QW) heterostructure from InP substrates. An intact sidewall secured by SiO2 was demonstrated during the sacrificial layer selective etching, resulting in the suspended InGaAsP QW membranes which were later transferred to the Si substrate with polydimethylsiloxane stamp. The quality of the transferred InGaAsP QW membranes has been validated through photoluminescence and EL measurements. This approach could extend to arbitrary targeting substrate in numerous photonics and electronics applications.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 01, 2016
- Source ID
- 10.1116/1.4958799
Entities
People
- Dong Liu
- Hongjun Yang
- Jesper Berggren
- Laxmy Menon
- Mattias Hammar
- Shih‐Chia Liu
- Tzu-hsuan Chang
- Weidong Zhou
- Wenjuan Fan
- Zhenqiang Ma
- Zhenyang Xia
Organizations
- Air Force Office of Scientific Research
- Army Research Office
- Division of Electrical, Communications & Cyber Systems
- Royal Institute of Technology
- University of Texas at Arlington
- University of Wisconsin–Madison