Structure and optical band gaps of (Ba,Sr)SnO3 films grown by molecular beam epitaxy
Abstract
Epitaxial growth of (BaxSr1−x)SnO3 films with 0 ≤ x ≤ 1 using molecular beam epitaxy is reported. It is shown that SrSnO3 films can be grown coherently strained on closely lattice and symmetry matched PrScO3 substrates. The evolution of the optical band gap as a function of composition is determined by spectroscopic ellipsometry. The direct band gap monotonously decreases with x from to 4.46 eV (x = 0) to 3.36 eV (x = 1). A large Burnstein-Moss shift is observed with La-doping of BaSnO3 films. The shift corresponds approximately to the increase in Fermi level and is consistent with the low conduction band mass.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 19, 2016
- Source ID
- 10.1116/1.4959004
Entities
People
- Honggyu Kim
- Kaveh Ahadi
- Santosh Raghavan
- Susanne Stemmer
- Timo Schumann
Organizations
- National Science Foundation
- Office of Naval Research
- United States Department of Energy
- University of California