Current relaxation analysis in AlGaN/GaN high electron mobility transistors
Abstract
Current relaxations in AlGaN/GaN high electron mobility transistors (HEMTs) often show a broad spread of relaxation times. These are commonly linked to the ionization energies of the traps in different regions of the devices and the relaxations are assumed to be exponential. To explain the observed spread of parameters, the presence of multiple centers is assumed. However, in actual spectra, only a few main peaks in the lifetimes distributions are observed, with considerable broadening of the peaks. In this paper, the authors examine the possible origin of the relaxation time broadening, including the presence of disorder giving rise to extended exponential decays and to physical broadening of discrete levels into bands. The latter is modeled by Gaussian broadening of the logarithm of relaxation time. The authors demonstrate the analysis of the peak positions and widths of the first derivative of the current transient by the logarithm in time, which is quite useful in deriving the relevant broadening parameters. They illustrate the approach for current relaxations in HEMTs for different pulsing modes.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2017
- Source ID
- 10.1116/1.4973973
Entities
People
- A. V. Turutin
- A. Y. Polyakov
- Alexey A. Dorofeev
- Eugene S. Kondratyev
- Fan Ren
- I. Shchemerov
- In-hwan Lee
- N. B. Smirnov
- Nadezhda B. Gladysheva
- R. A. Zinovyev
- S. J. Pearton
- Taehoon Jang
- Yulia A. Turusova
Organizations
- Defense Threat Reduction Agency
- Jeonbuk National University
- Ministry of Education and Science of the Russian Federation
- Ministry of Trade, Industry and Energy
- National Research Foundation of Korea
- National University of Science and Technology
- University of Florida
- joint-stock company