AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN
Abstract
The authors report the growth by rf-plasma assisted molecular beam epitaxy of AlN/GaN/AlN resonant tunneling diodes which exhibit stable, repeatable, and hysteresis-free negative differential resistance (NDR) at room temperature for more than 1000 bias sweeps between −2.5 and +5.5 V. The device layers were grown on freestanding, Ga-polar GaN substrates grown by hydride vapor phase epitaxy and having a density of threading dislocations between 106 and 107 cm−2. The authors speculate that the repeatable NDR is facilitated by the low-dislocation density substrates.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 01, 2017
- Source ID
- 10.1116/1.4977779
Entities
People
- D. Scott Katzer
- David F. Storm
- David J. Meyer
- Elliott R. Brown
- Matthew T. Hardy
- Neeraj Nepal
- Paul R. Berger
- Tyler A Growden
- Weidong Zhang
Organizations
- Office of Naval Research
- Ohio State University
- United States Naval Research Laboratory
- Wright State University