Growth of coherent BGaN films using BBr3 gas as a boron source in plasma assisted molecular beam epitaxy
Abstract
Incorporating boron into gallium nitride to make BxGa1-xN solid solutions would create an avenue for extreme alloys due to the fact that wurtzite phase BN has a larger band gap and smaller lattice parameters compared to GaN. In this paper, the authors report the growth of high crystal quality, random alloy BxGa1-xN thin films with x up to 3.04% grown on (0001) Ga-face GaN on sapphire substrates using plasma assisted molecular beam epitaxy and BBr3 gas as a B source. High resolution x-ray diffraction was used to measure both the c plane spacing and the strain state of the films. It was determined that the films were fully coherent to the GaN substrate. Elastic stress-strain relations and Vegard's law were used to calculate the composition. Atom probe tomography was used to confirm that the BxGa1-xN films were random alloys. In addition to demonstrating a growth technique for high crystal quality BxGa1-xN thin films, this paper demonstrated the use of BBr3 as a novel B source in plasma assisted molecular beam epitaxy.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 15, 2017
- Source ID
- 10.1116/1.4986185
Entities
People
- Bastien Bonef
- Chris G. Van de Walle
- Cyrus E. Dreyer
- James S. Speck
- John English
- Richard C. Cramer
Organizations
- National Science Foundation
- Office of Naval Research
- Solid State Lighting and Energy Electronics Center, University of California Santa Barbara
- University of California