Comparison study of the low temperature growth of dilute GeSn and Ge
Abstract
Dilute GeSn films have been grown at the temperatures below 400 °C in a cold-walled ultrahigh vacuum chemical-vapor-deposition chamber. Diluted tin-tetrachloride (SnCl4) with a flow rate of 0.02 sccm was used as Sn precursor while the flow rate of Ge precursor germane was 10 sccm. For comparison, the Ge films were grown under the same conditions except only the precursor germane was used. Material growth study revealed the linear growth rates for both films and increased nucleation times at lower temperatures. Material and optical characterizations showed that the GeSn films featured longer nucleation times, higher growth rates, and higher crystal quality compared to those of Ge films grown at the same conditions. The growth mechanism investigation suggested that GeSn growth using SnCl4 is an exothermic chemical reaction which could lead to the improved material quality.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 11, 2017
- Source ID
- 10.1116/1.4990773
Entities
People
- Aboozar Mosleh
- Bader Alharthi
- Baohua Li
- Hameed A. Naseem
- Joshua M. Grant
- Mansour Mortazavi
- Perry C. Grant
- Shui-Qing Yu
- Wei Dou
- Wei Du
Organizations
- Air Force Office of Scientific Research
- National Aeronautics and Space Administration
- University of Arkansas
- University of Arkansas at Pine Bluff