Improvement of Ohmic contacts on Ga2O3 through use of ITO-interlayers
Abstract
The use of ITO interlayers between Ga2O3 and Ti/Au metallization is shown to produce Ohmic contacts after annealing in the range of 500–600 °C. Without the ITO, similar anneals do not lead to linear current–voltage characteristics. Transmission line measurements were used to extract the specific contact resistance of the Au/Ti/ITO/Ga2O3 stacks as a function of annealing temperature. Sheet, specific contact, and transfer resistances all decreased sharply from as-deposited values with annealing. The minimum transfer resistance and specific contact resistance of 0.60 Ω mm and 6.3 × 10−5 Ω cm2 were achieved after 600 °C annealing, respectively. The conduction band offset between ITO and Ga2O3 is 0.32 eV and is consistent with the improved electron transport across the heterointerface.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 03, 2017
- Source ID
- 10.1116/1.4995816
Entities
People
- Akito Kuramata
- David C. Hays
- Fan Ren
- Ivan I. Kravchenko
- Jiancheng Yang
- Patrick H. Carey Iv
- Stephen Pearton
Organizations
- Defense Threat Reduction Agency
- New Energy and Industrial Technology Development Organization
- Oak Ridge National Laboratory
- Tamura Corporation
- United States Department of Energy
- University of Florida