Improved a-B10C2+xHy/Si p-n heterojunction performance after neutron irradiation
Abstract
The impact of neutron irradiation, in the energy range of ∼0.025 eV, on amorphous semiconducting partially dehydrogenated boron carbide (a-B10C2+xHy) on silicon p-n heterojunction diodes was investigated. The heterojunction devices were created by synthesizing a-B10C2+xHy via plasma enhanced chemical vapor deposition on n-type silicon. Unlike many electronic devices, the performance of the a-B10C2+xHy heterojunction diode improved with neutron irradiation, in spite of the large neutron cross section of 10B. There is also increased charge carrier lifetime of more than 200% with modest neutron irradiation of approximately 2.7 × 108 to 1.08 × 109 neutrons/cm2.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2018
- Source ID
- 10.1116/1.5008999
Entities
People
- George Peterson
- Michael Nastasi
- Natale J. Ianno
- Peter A Dowben
- Qing Su
- Yongqiang Wang
Organizations
- Los Alamos National Laboratory
- Office of Naval Research
- United States Department of Energy
- University of Nebraska–Lincoln