Growth of II-VI/III-V heterovalent quantum structures
Abstract
Lattice-matched heterovalent II-VI/III-V semiconductor structures, such as quantum wells and double heterostructures consisting of ZnSe/GaAs and ZnTe/GaSb, are grown using single and dual-chamber molecular beam epitaxy systems by utilizing migration-enhanced epitaxy and a substrate temperature ramp method. Specific elemental overpressures are utilized after each epilayer growth to control the surface termination and to prevent defective III-VI compounds from forming at the heterovalent interfaces. Characterization using x-ray diffraction and transmission electron microscopy confirms sharp interfaces and coherent bonding between the heterovalent materials. Photoluminescence measurements show optical transitions from the heterovalent double heterostructures and quantum wells, as well as evidence for midgap defect states in the III-V layers. The III-V layers have a very low density of structural defects, but some stacking faults are observed in the II-VI layers.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 01, 2018
- Source ID
- 10.1116/1.5017972
Entities
People
- Brian D. Tracy
- David J Smith
- Guopeng Chen
- Maxwell B. Lassise
- Peng Wang
- Yong-hang Zhang
Organizations
- Air Force Office of Scientific Research
- Arizona State University