Electronic structure of BaSnO3 investigated by high-energy-resolution electron energy-loss spectroscopy and ab initio calculations
Abstract
There has been growing interest in perovskite BaSnO3 due to its desirable properties for oxide electronic devices, including high electron mobility at room temperature and optical transparency. As these electronic and optical properties originate largely from the electronic structure of the material, here the basic electronic structure of epitaxially grown BaSnO3 films is studied using high-energy-resolution electron energy-loss spectroscopy in a transmission electron microscope and ab initio calculations. This study provides a detailed description of the dielectric function of BaSnO3, including the energies of bulk plasmon excitations and critical interband electronic transitions, the band structure and partial densities of states, the measured band gap, and more.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 12, 2018
- Source ID
- 10.1116/1.5026298
Entities
People
- Abhinav Prakash
- Bharat Jalan
- Chris Leighton
- Hwanhui Yun
- Jong Seok Jeong
- K. Andre Mkhoyan
- Koustav Ganguly
- Mehmet Topsakal
- Renata M. Wentzcovitch
Organizations
- Defense Threat Reduction Agency
- National Science Foundation
- University of Minnesota