Epitaxial growth and dielectric characterization of atomically smooth 0.5Ba(Zr0.2Ti0.8)O3–0.5(Ba0.7Ca0.3)TiO3 thin films
Abstract
The authors report the epitaxial growth and the dielectric properties of relaxor ferroelectric 0.5Ba(Zr0.2Ti0.8)O3–0.5(Ba0.7Ca0.3)TiO3 thin films with atomically flat surface on GdScO3 single crystal substrates. The authors studied the effects of growth conditions, such as the substrate temperature and the oxygen pressure on the structure of the thin films, as measured by x-ray diffraction, to identify the optimal growth conditions. The authors achieved sustained layer-by-layer growth of 0.5Ba(Zr0.2Ti0.8)O3–0.5(Ba0.7Ca0.3)TiO3 films as monitored by in situ and real time reflective high energy electron diffraction. Atomic force microscopy investigations showed atomically smooth step terrace structures. Aberration-corrected scanning transmission electron microscopy images show good epitaxial relation of the film and the substrate without any line defects. High dielectric constant (∼1400) and slim hysteresis loops in polarization-electric field characteristics were observed in 0.5Ba(Zr0.2Ti0.8)O3–0.5(Ba0.7Ca0.3)TiO3 films, which are characteristic of relaxor-type ferroelectric materials.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 31, 2018
- Source ID
- 10.1116/1.5054130
Entities
People
- Albina Y. Borisevich
- Arashdeep Singh Thind
- Asif Islam Khan
- Debarghya Sarkar
- Jayakanth Ravichandran
- Rehan Kapadia
- Rohan Mishra
- Thomas Orvis
- Yang Liu
- Zheng Wang
Organizations
- Air Force Office of Scientific Research
- Division of Materials Research
- Georgia Tech
- National Science Foundation
- Oak Ridge National Laboratory
- University of Southern California
- Washington University in St. Louis