Nanoscale etching of perovskite oxides for field effect transistor applications
Abstract
The etching of epitaxially grown perovskite oxide BaSnO3 (BSO) and BaTiO3 (BTO) thin films is studied using Cl-based (BCl3/Ar) and F-based (CF4/Ar) plasma chemistries in an inductively coupled plasma reactive ion etching (ICP-RIE) system for the development of field effect transistors (FETs). It is found that the BCl3/Ar process has a time-independent and a higher etch rate and creates a smooth etched surface, while the etch rate of BSO and BTO in CF4/Ar plasma decreases with the etching time duration. For the BCl3/Ar etching process, the etch rate increases with both ion density and ion energy, suggesting the combination of chemical plasma etching and physical ion sputtering mechanisms. Using the Cl-based etching process, BaSnO3 and BaTiO3 heterojunction FETs are developed. The devices with a gate length of 1.5 μm have a saturation current density of 287.6 mA/mm, a maximum transconductance of gm = 91.3 mS/mm, an FET mobility of 45.3 cm2/V s, and a threshold voltage of −1.75 V. The etching processes developed in this work will enable further development of perovskite oxide heterostructure electronic devices.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 18, 2019
- Source ID
- 10.1116/1.5122667
Entities
People
- Caiyu Wang
- Christopher R. Freeze
- Hao Yang
- Hareesh Chandrasekar
- Junao Cheng
- Nick Combs
- Nidhin Kurian Kalarickal
- Omor Shoron
- Siddharth Rajan
- Susanne Stemmer
- Wangzhou Wu
- Wu Lu
Organizations
- Defense Advanced Research Projects Agency
- Ohio State University
- University of California, Santa Barbara