Analysis of useful ion yield for the Mg dopant in GaN by quadrupole—SIMS
Abstract
The authors present a quantitative secondary ion mass spectrometry (SIMS) analysis of the useful ion yield of magnesium dopant in a gallium nitride matrix. A quadrupole SIMS instrument was used to analyze an Mg-doped GaN sample grown by metal organic chemical vapor deposition. Oxygen (O2+) was used as the primary ion beam and its energy was varied in the range from 0.5 to 5 kV with and without oxygen flooding near the sample. The results of the analysis can be used to determine the primary beam energies for optimal magnesium sensitivity.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 30, 2020
- Source ID
- 10.1116/1.5144500
Entities
People
- Alexander Kozhanov
- Brendan Cross
- Graham A. Cooke
- M. D. Williams
- M. K. I. Senevirathna
- Mark Vernon
Organizations
- Army Research Office
- Clark Atlanta University
- Division of Materials Research
- Georgia State University
- National Science Foundation
- United States Department of Energy