Tutorial on forming through-silicon vias
Abstract
Through-silicon vias (TSVs) are a critical technology for three-dimensional integrated circuit technology. These through-substrate interconnects allow electronic devices to be stacked vertically for a broad range of applications and performance improvements such as increased bandwidth, reduced signal delay, improved power management, and smaller form-factors. There are many interdependent processing steps involved in the successful integration of TSVs. This article provides a tutorial style review of the following semiconductor fabrication process steps that are commonly used in forming TSVs: deep etching of silicon to form the via, thin film deposition to provide insulation, barrier, and seed layers, electroplating of copper for the conductive metal, and wafer thinning to reveal the TSVs. Recent work in copper electrochemical deposition is highlighted, analyzing the effect of accelerator and suppressor additives in the electrolyte to enable void-free bottom-up filling from a conformally lined seed metal.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 14, 2020
- Source ID
- 10.1116/6.0000026
Entities
People
- Andrew E. Hollowell
- Lyle A. Menk
- Matthew B. Jordan
- Rebecca P. Schmitt
- Susan L. Burkett
Organizations
- Air Force Research Laboratory
- National Science Foundation
- Sandia National Laboratories
- University of Alabama
- University of New Mexico