Carbon impurity concentrations in BaSnO3 films grown by molecular beam epitaxy using a tin oxide source
Abstract
Achieving high carrier mobilities and low carrier densities has been one of the major challenges in the growth of BaSnO3 thin films. In this study, unintentional carbon impurities are investigated as one possible cause for poor electrical transport. Carbon concentrations in La-doped BaSnO3 films grown by molecular beam epitaxy using solid SnO2 sources are quantified using secondary ion mass spectroscopy. High carbon concentrations of mid-to-low 1018 atoms/cm3 are detected in samples grown from SnO2 powder and pellet sources, respectively. The carbon contamination is attributed to adsorbents present on the surface of the air exposed source material. Use of an oxygen plasma during growth does not reduce the amount of carbon detected in the films. Possible steps to reduce carbon contamination are discussed.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 03, 2020
- Source ID
- 10.1116/6.0000122
Entities
People
- Nicholas G. Combs
- Susanne Stemmer
- Thomas E. Mates
- Wangzhou Wu
Organizations
- Defense Advanced Research Projects Agency
- National Science Foundation
- Office of Naval Research Global
- University of California