Ru(0001) and SiO2/Ru(0001): XPS study
Abstract
X-ray photoelectron spectroscopy (XPS) is used to analyze the chemistry of the Ru(0001) film surface and the Ru/SiO2 interfacial region at different annealing conditions. The XPS spectra are collected under ultrahigh vacuum (base pressure of ∼5 × 10−10 Torr) condition using a SPECS electron spectrometer with a PHOIBOS 100 hemispherical energy analyzer and an XR 50 Al Kα x-ray source (1486.67 eV). High-resolution spectra of O 1s, Ru 3d/C 1s, and Si 2p together with survey scans are presented. The presence of 1 × 1 low energy diffraction pattern, collected from a 950 °C Ar/H2 step-annealed Ru(0001) sample, confirms the hexagonal periodicity of Ru(0001) surfaces.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 15, 2020
- Source ID
- 10.1116/6.0000172
Entities
People
- Asim Khaniya
- Kevin R. Coffey
- Quintin Cumston
- Sameer Ezzat
- William E. Kaden
Organizations
- Air Force Office of Scientific Research
- National Science Foundation
- Semiconductor Research Corporation
- University of Central Florida
- University of Mosul