Assessment of the (010) β-Ga2O3 surface and substrate specification
Abstract
Recent breakthroughs in bulk crystal growth of the thermodynamically stable beta phase of gallium oxide (β-Ga2O3) have led to the commercialization of large-area β-Ga2O3 substrates with subsequent epitaxy on (010) substrates producing high-quality films. Still, metalorganic chemical vapor deposition, molecular beam epitaxy, and processing of the (010) β-Ga2O3 surface are known to form subnanometer-scale facets along the [001] direction as well as larger ridges with features perpendicular to the [001] direction. A density function theory calculation of the (010) surface shows an ordering of the surface as a subnanometer-scale feature along the [001] direction. Additionally, the general crystal structure of β-Ga2O3 is presented, and recommendations are presented for standardizing (010) substrates to account for and control the larger-scale ridge formation.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 24, 2020
- Source ID
- 10.1116/6.0000725
Entities
People
- Charles R. Eddy
- Jennifer K Hite
- Jihyun Kim
- Marko J. Tadjer
- Michael A. Mastro
- Stephen Pearton
Organizations
- Defense Threat Reduction Agency
- Korea Institute of Energy Technology Evaluation and Planning
- Korea University
- National Research Foundation of Korea
- Office of Naval Research
- United States Naval Research Laboratory
- University of Florida