Design of Ga2O3 modulation doped field effect transistors
Abstract
The design of β-Ga2O3-based modulation-doped field effect transistors is discussed with a focus on the role of self-heating and resultant modification of the electron mobility profile. Temperature- and doping-dependent model of the electron mobility as well as temperature- and orientation-dependent approximations of the thermal conductivity of β-Ga2O3 are presented. A decrease in drain current was attributed to a position-dependent mobility reduction caused by a coupled self-heating mechanism and a high electric-field mobility reduction mechanism. A simple thermal management solution is presented where heat is extracted through the source contact metal. Additionally, it is shown that an undesired secondary channel can form at the modulation-doped layer that is distinguished by an inflection in the transconductance curve.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 24, 2021
- Source ID
- 10.1116/6.0000825
Entities
People
- Fan Ren
- Jihyun Kim
- Marko J. Tadjer
- Michael A. Mastro
- Stephen Pearton
Organizations
- Defense Threat Reduction Agency
- Korea Institute of Energy Technology Evaluation and Planning
- Korea University
- National Research Foundation of Korea
- Office of Naval Research
- United States Naval Research Laboratory
- University of Florida