Effect of metal contacts on (100) β-Ga2O3 Schottky barriers
Abstract
The Schottky barriers of Ti, Mo, Co, Ni, Pd, and Au on (100) β-Ga2O3 substrates were analyzed using a combination of current-voltage (J-V), capacitance-voltage (C-V), and current-voltage-temperature (J-V-T) measurements. Near-ideal, average ideality factors for Ti, Mo, Co, and Ni were 1.05–1.15, whereas higher ideality factors (∼1.3) were observed for Pd and Au contacts. Barrier heights ranging from 0.60 to 1.20 eV were calculated from J-V measurements for the metals with low ideality factors. C-V measurements of all Schottky metals were conducted and yielded average barrier heights ranging from 0.78 to 1.98 eV. J-V-T measurements of Ti and Co diodes yielded barrier heights of 0.81 and 1.35 eV, respectively. The results reveal a strong positive correlation between the calculated Schottky barrier heights and the metal work functions: the index of interface behavior, S = 0.70, 0.97, and 0.81 for J-V, C-V, and J-V-T data, respectively.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 10, 2021
- Source ID
- 10.1116/6.0000877
Entities
People
- Andreas Popp
- Elizabeth V. Favela
- Guenter Wagner
- Kalyan Kumar Das
- Kunyao Jiang
- Lisa M. Porter
- Luke A. M. Lyle
- Zbigniew Galazka
Organizations
- Air Force Office of Scientific Research
- Carnegie Mellon University
- Leibniz Association
- North Carolina State University