Depth-resolved cathodoluminescence and surface photovoltage spectroscopies of gallium vacancies in β-Ga2O3 with neutron irradiation and forming gas anneals
Abstract
The gallium vacancy is one of the dominant native point defects in β-Ga2O3, one that, together with its complexes, can have a major effect on free carrier densities and transport in this wide bandgap semiconductor. We used a combination of depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to identify the optical and energy-level properties of these defects as well as how their defect densities and spatial distributions vary with neutron irradiation and temperature-dependent-forming gas anneals. These studies reveal optical signatures that align closely with theoretical energy-level predictions. Likewise, our optical techniques reveal variations in these defect densities that are consistent with hydrogen passivation of gallium vacancies as a function of temperature and depth from the free Ga2O3 surface. These techniques can help guide the understanding and control of dominant native point defects in Ga2O3.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 13, 2021
- Source ID
- 10.1116/6.0001240
Entities
People
- D. C. Look
- Hantian Gao
- Hongping Zhao
- Kevin Leedy
- Lei Cao
- Leonard J Brillson
- Md Rezaul Karim
- Shreyas Muralidharan
- Siddharth Rajan
Organizations
- Air Force Office of Scientific Research
- Air Force Research Laboratory
- National Science Foundation
- Ohio State University
- United States Department of Energy
- Wright State University