Growth and characterization of α-Ga2O3 on sapphire and nanocrystalline β-Ga2O3 on diamond substrates by halide vapor phase epitaxy
Abstract
Halide vapor phase epitaxial (HVPE) Ga2O3 films were grown on c-plane sapphire and diamond substrates at temperatures up to 550 °C without the use of a barrier dielectric layer to protect the diamond surface. Corundum phase α-Ga2O3 was grown on the sapphire substrates, whereas the growth on diamond resulted in regions of nanocrystalline β-Ga2O3 (nc-β-Ga2O3) when oxygen was present in the HVPE reactor only during film growth. X-ray diffraction confirmed the growth of α-Ga2O3 on sapphire but failed to detect any β-Ga2O3 reflections from the films grown on diamond. These films were further characterized via Raman spectroscopy, which revealed the β-Ga2O3 phase of these films. Transmission electron microscopy demonstrated the nanocrystalline character of these films. From cathodoluminescence spectra, three emission bands, UVL′, UVL, and BL, were observed for both the α-Ga2O3/sapphire and nc-Ga2O3/diamond, and these bands were centered at approximately 3.7, 3.2, and 2.7 eV.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 03, 2022
- Source ID
- 10.1116/6.0002115
Entities
People
- Akito Kuramata
- Aman Haque
- James Spencer Lundh
- Leonid Chernyak
- Marko J. Tadjer
- Nahid Sultan Al-Mamun
- Stephen Pearton
- Sushrut Modak
- Thieu Quang Tu
Organizations
- Defense Threat Reduction Agency
- NATO
- National Research Council
- National Science Foundation
- Pennsylvania State University
- United States Naval Research Laboratory
- United States – Israel Binational Science Foundation
- University of Central Florida
- University of Florida