Diffusion-assisted molecular beam epitaxy of CuCrO2 thin films
Abstract
Using molecular beam epitaxy (MBE) to grow multielemental oxides (MEOs) is generally challenging, partly due to difficulty in stoichiometry control. Occasionally, if one of the elements is volatile at the growth temperature, stoichiometry control can be greatly simplified using adsorption-controlled growth mode. Otherwise, stoichiometry control remains one of the main hurdles to achieving high-quality MEO film growths. Here, we report another kind of self-limited growth mode, dubbed diffusion-assisted epitaxy, in which excess species diffuses into the substrate and leads to the desired stoichiometry, in a manner similar to the conventional adsorption-controlled epitaxy. Specifically, we demonstrate that using diffusion-assisted epitaxy, high-quality epitaxial CuCrO2 films can be grown over a wide growth window without precise flux control using MBE.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 04, 2022
- Source ID
- 10.1116/6.0002151
Entities
People
- Alessandro R. Mazza
- Gaurab Rimal
- Matthew Brahlek
- Seongshik Oh
Organizations
- Army Research Office
- Los Alamos National Laboratory
- National Science Foundation
- Oak Ridge National Laboratory
- Office of Basic Energy Sciences
- Rutgers University