Close-packed silicon field emitter arrays with integrated anode fabricated by electron-beam lithography
Abstract
Design, fabrication, and characterization of close-packed field emitter tips enclosed in an Si trench and stand-alone arrays are presented. The two types of field emitter arrays (FEAs) are fabricated using a combination of high-throughput electron-beam lithography, plasma etching, and anode bonding integration technology. The field emitter array inside the trench shows a higher turn-on voltage compared to the stand-alone array. Without any tip sharpening, a current of 7.5 μA was observed at 300 V from FEAs inside the trench, while a higher current of 12.5 μA was observed at the same voltage for the stand-alone array.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 19, 2022
- Source ID
- 10.1116/6.0002295
Entities
People
- Saeed Mohammadi
- Shabnam Ghotbi
Organizations
- Air Force Office of Scientific Research
- Purdue University