Type-II band alignment for atomic layer deposited HfSiO4 on α-Ga2O3
Abstract
There is increasing interest in α-polytype Ga2O3 for power device applications, but there are few published reports on dielectrics for this material. Finding a dielectric with large band offsets for both valence and conduction bands is especially challenging given its large bandgap of 5.1 eV. One option is HfSiO4 deposited by atomic layer deposition (ALD), which provides conformal, low damage deposition and has a bandgap of 7 eV. The valence band offset of the HfSiO4/Ga2O3 heterointerface was measured using x-ray photoelectron spectroscopy. The single-crystal α-Ga2O3 was grown by halide vapor phase epitaxy on sapphire substrates. The valence band offset was 0.82 ± 0.20 eV (staggered gap, type-II alignment) for ALD HfSiO4 on α-Ga0.2O3. The corresponding conduction band offset was −2.72 ± 0.45 eV, providing no barrier to electrons moving into Ga2O3.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 01, 2023
- Source ID
- 10.1116/6.0002453
Entities
People
- David C. Hays
- Elaheh Ahmadi
- Fan Ren
- Jian-Sian Li
- Kamruzzaman Khan
- Md Irfan Khan
- Stephen Pearton
- Xinyi Xia
- Yuichi Oshima
- Zhuoqun Wen
Organizations
- Air Force Office of Scientific Research
- Defense Threat Reduction Agency
- National Science Foundation
- University of Florida
- University of Michigan