Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV α-(AlGa) 2 O 3 on m-plane sapphire
Abstract
Crystalline oxides spanning very broad 5.4- to 8.6-eV bandgaps are successfully grown on sapphire by MBE.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 08, 2021
- Source ID
- 10.1126/sciadv.abd5891
Entities
People
- Celesta S. Chang
- Darrell G. Schlom
- David A. Muller
- Debdeep Jena
- Derek Rowe
- Huili Grace Xing
- Kevin Lee
- Michael C. Cao
- Riena Jinno
- Shao-Ting Ho
- Takeyoshi Onuma
- Vladimir Protasenko
- Yong-Jin Cho
Organizations
- Air Force Office of Scientific Research
- Cornell University
- Japan Society for the Promotion of Science
- Kogakuin University