Layer- and gate-tunable spin-orbit coupling in a high-mobility few-layer semiconductor
Abstract
Rashba spin-orbit coupling in atomically thin InSe is varied layer by layer and by tuning out-of-plane electric field.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 29, 2021
- Source ID
- 10.1126/sciadv.abe2892
Entities
People
- Chun Lau
- Dmitry Shcherbakov
- Dmitry Smirnov
- Jiawei Yang
- Kaya Wei
- Kenji Watanabe
- Luis Balicas
- Marc Bockrath
- Petr Stepanov
- Ryan E Baumbach
- Shahriar Memaran
- Takashi Taniguchi
- Theo Siegrist
- Wenkai Zheng
- Wolfgang Windl
- Yan Xin
- Yaxian Wang
Organizations
- Air Force Office of Scientific Research
- Japan Society for the Promotion of Science
- Ministry of Agriculture, Forestry and Food
- Ministry of Education, Culture, Sports, Science and Technology
- National High Magnetic Field Laboratory
- National Institute for Materials Science
- National Science Foundation
- Ohio State University
- United States Department of Energy