Momentum-resolved electronic structure and band offsets in an epitaxial NbN/GaN superconductor/semiconductor heterojunction

Abstract

Addressing design of future quantum devices, the study uncovers electronic structure of a superconductor-semiconductor interface.

Document Details

Document Type
Pub Defense Publication
Publication Date
Dec 24, 2021
Source ID
10.1126/sciadv.abi5833

Entities

People

  • Betül Pamuk
  • Celesta S. Chang
  • David A. Muller
  • Debdeep Jena
  • Donglai Feng
  • Guru Khalsa
  • Huili Grace Xing
  • John Wright
  • Thorsten Schmitt
  • Tianlun Yu
  • Vladimir N Strocov
  • Xiaoqiang Wang
  • Yury Matveyev

Organizations

  • Collaborative Innovation Center of Advanced Microstructures
  • Cornell University
  • Fudan University
  • University of Science and Technology of China

Tags

Fields of Study

  • Physics

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing