Polytype Distribution in Circumstellar Silicon Carbide

Abstract

The inferred crystallographic class of circumstellar silicon carbide based on astronomical infrared spectra is controversial. We have directly determined the polytype distribution of circumstellar SiC from transmission electron microscopy of presolar silicon carbide from the Murchison carbonaceous meteorite. Only two polytypes (of a possible several hundred) were observed: cubic 3C and hexagonal 2H silicon carbide and their intergrowths. We conclude that this structural simplicity is a direct consequence of the low pressures in circumstellar outflows and the corresponding low silicon carbide condensation temperatures.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jun 07, 2002
Source ID
10.1126/science.1071136

Entities

People

  • F. J. Stadermann
  • R. S. Lewis
  • S. Amari
  • Scott R. Messenger
  • T. J. Bernatowicz
  • T. L. Daulton

Organizations

  • Argonne National Laboratory
  • United States Naval Research Laboratory
  • University of Chicago
  • Washington University in St. Louis

Tags

Fields of Study

  • Physics

Readers

  • Astronomy/Astrophysics
  • Semiconductor Device Technology

Technology Areas

  • AI & ML
  • AI & ML - Bayesian Inference
  • Microelectronics