Silicon Carbide as a Platform for Power Electronics
Abstract
Methods for growing large, defect-free silicon carbide crystals have enabled the fabrication of devices that can operate at high power.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 12, 2009
- Source ID
- 10.1126/science.1168704
Entities
People
- C. R. Eddy Jr.
- D. Kurt Gaskill
Organizations
- United States Naval Research Laboratory