Control of Spin Precession in a Spin-Injected Field Effect Transistor
Abstract
Using the spin of an electron in addition to, or instead of, the charge properties is believed to have many benefits in terms of speed, power-cost, and integration density over conventional electronic circuits. At the heart of the field of spintronics has been a proposed spin-analog of the electronic transistor, the spin field effect transistor. Koo et al. (p. 1515 ) demonstrate the injection and detection of spin between two ferromagnetic contacts and show how the magnitude of the spin-current between the source and drain contacts can be controlled by a voltage applied to a gate. The results present an experimental realization of the concepts described for the spin-transistor.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 18, 2009
- Source ID
- 10.1126/science.1173667
Entities
People
- Hyun Cheol Koo
- Jae Hyun Kwon
- Jonghwa Eom
- Joonyeon Chang
- Mark A. Johnson
- Suk Hee Han
Organizations
- Korea Institute of Science and Technology
- Sejong University
- United States Naval Research Laboratory