Nanoscale Tunable Reduction of Graphene Oxide for Graphene Electronics
Abstract
The interface within devices between conductors, semiconductors, and insulators is usually created by stacking patterned layers of different materials. For flexible electronics, it can be advantageous to avoid this architectural constraint. Graphene oxide, formed by chemical exfoliation of graphite, can be reduced to a more conductive form using chemical reductants. Wei et al. (p. 1373 ) now show that layers of graphene oxide can also be reduced using a hot atomic force microscope tip to create materials comparable to those of organic conductors. This process can create patterned regions (down to 12 nanometers in width) that differ in conductivity by up to four orders of magnitude.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 11, 2010
- Source ID
- 10.1126/science.1188119
Entities
People
- Arnaldo R. Laracuente
- Claire Berger
- Debin Wang
- Elisa Riedo
- Michael K. Yakes
- Paul E Sheehan
- Seth Marder
- Soo-young Kim
- Suenne Kim
- Walter A. De Heer
- William P King
- Yike Hu
- Zhenting Dai
- Zhongqing Wei
Organizations
- Chung-Ang University
- Georgia Tech
- United States Naval Research Laboratory
- University of Illinois Urbana–Champaign