Ohm’s Law Survives to the Atomic Scale
Abstract
One of the challenges in downsizing electronic circuits is maintaining low resistivity of wires, because shrinking their diameter to near atomic dimensions increases interface effects and can decrease the effectiveness of dopants. Weber et al. (p. 64 ; see the Perspective by Ferry ) created nanowires on a silicon surface with the deposition of phosphorus atoms through decomposition of PH 3 with a scanning tunneling microscope tip. A brief thermal annealing embedded these nanowires, which varied from 1.5 to 11 nanometers in width, into the silicon surface. Their resistivity was independent of width, and their current-carrying capability was comparable to that of thicker copper interconnects.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 06, 2012
- Source ID
- 10.1126/science.1214319
Entities
People
- Andreas Fuhrer
- Brian Weber
- D. L. Thompson
- G. Klimeck
- Hojoon Ryu
- L. C. L. Hollenberg
- M. Y. Simmons
- S. Mahapatra
- Shang‐Fan Lee
- T. C. G. Reusch
- W. C. T. Lee
Organizations
- Army Research Office
- National Security Agency
- Purdue University
- University of Melbourne
- University of New South Wales