Nanoscale Transistors—Just Around the Gate?
Abstract
Advanced geometries for gate electrodes that reduce current leakage can decrease the size of high-performance transistors.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 12, 2013
- Source ID
- 10.1126/science.1240452
Entities
People
- Cory D. Cress
- Suman Datta
Organizations
- Pennsylvania State University
- United States Naval Research Laboratory