Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures
Abstract
Ferroelectric field effect devices offer the possibility of nonvolatile active memory elements. Doped rare-earth manganates, which are usually associated with colossal magnetoresistive properties, have been used as the semiconductor channel material of a prototypical epitaxial field effect device. The carrier concentration of the semiconductor channel can be “tuned” by varying the manganate stochiometry. A device with La 0.7 Ca 0.3 MnO 3 as the semiconductor and PbZr 0.2 Ti 0.8 O 3 as the ferroelectric gate exhibited a modulation in channel conductance of at least a factor of 3 and a retention loss of 3 percent after 45 minutes without power.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 11, 1997
- Source ID
- 10.1126/science.276.5310.238
Entities
People
- John J. Benedetto
- R. Ramesh
- Scott A. Mathews
- T. Venkatesan
Organizations
- United States Army Research Laboratory
- University of Maryland