Voltage-tunable circular photogalvanic effect in silicon nanowires
Abstract
The most common materials used in electronics produce only a simple optical response. Dhara et al. observed a complex circular photogalvanic effect in silicon nanowires, with the magnitude and direction of the induced photocurrent dependent on the polarization of the light. The specifics of the structure and geometry of the component materials are responsible for the effect. It should therefore be possible to engineer the same effect in other achiral materials and thus expand the box of enhanced functional materials for optical applications.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 14, 2015
- Source ID
- 10.1126/science.aac6275
Entities
People
- Eugene Mele
- Ritesh Agarwal
- Sajal Dhara
Organizations
- Army Research Office
- University of Pennsylvania