A polarization-induced 2D hole gas in undoped gallium nitride quantum wells
Abstract
When two distinct materials are placed on top of each other, the difference in polarization between the two layers can induce charge carriers at the interface. Many such two-dimensional (2D) electron gases have been observed, but engineering a 2D hole gas without the help of doping has been much trickier. Chaudhuri et al. used molecular beam epitaxy to grow a layer of gallium nitride on top of aluminum nitride without introducing dopants. This approach resulted in a high-density 2D hole gas at the interface in this technologically relevant system.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 27, 2019
- Source ID
- 10.1126/science.aau8623
Entities
People
- David A. Muller
- Debdeep Jena
- Huili Grace Xing
- Reet Chaudhuri
- Samuel J Bader
- Zhen Chen
Organizations
- Air Force Office of Scientific Research
- Cornell University
- Intel Corporation
- National Science Foundation