Electron-phonon instability in graphene revealed by global and local noise probes

Abstract

Studying the electronic properties of graphene under extreme nonequilibrium conditions has provided a productive testbed to probe and monitor exotic transport phenomena. Andersen et al. report measurements of electron transport in ultraclean graphene devices where the electron drift velocity is extremely high. They found that direct current at high drift velocities generates a large increase in the noise at gigahertz frequencies and that the noise grows exponentially in the direction of the current. The authors attribute the emission mechanism to amplification of acoustic phonons through the Cerenkov effect.

Document Details

Document Type
Pub Defense Publication
Publication Date
Apr 12, 2019
Source ID
10.1126/science.aaw2104

Entities

People

  • Bo L Dwyer
  • Eugene A. Demler
  • Hongkun Park
  • Javier Sanchez-Yamagishi
  • Joaquin F Rodriguez-Nieva
  • Kartiek Agarwal
  • Kenji Watanabe
  • Mikhail Lukin
  • Philip Kim
  • Takashi Taniguchi
  • Trond I Andersen

Organizations

  • Gordon and Betty Moore Foundation
  • Harvard University
  • McGill University
  • National Institute for Materials Science
  • National Science Foundation
  • United States Department of Defense
  • University of California, Irvine

Tags

Fields of Study

  • Physics

Readers

  • Electronics Engineering
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Theoretical Analysis.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene